PEMH9,115 datasheet

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Маркировка

PEMH9,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PEMH9,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V Emitter- Base Voltage Vebo: 10 V Frequency - Transition: - ID_COMPONENTS: 1948044 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: 100 mA Power - Max: 300mW Power Dissipation: 200 mW Resistor - Base (r1) (ohms): 10K Resistor - Emitter Base (r2) (ohms): 47K Series: - Transistor Polarity: NPN/NPN Transistor Type: 2 NPN - Pre-Biased (Dual) Typical Input Resistor: 10 KOhms Typical Resistor Ratio: 0.213 Vce Saturation (max) @ Ib, Ic: 100mV @ 250?µA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes DC Collector/Base Gain hfe Min: 100 Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Emitter- Base Voltage VEBO: 10 V Factory Pack Quantity: 4000 Part # Aliases: PEMH9 T/R Other Names: 934056769115, PEMH9 T/R
Количество страниц

9 шт.
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77,07 KB